SIRA62DDP-T1-UE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: N-CHANNEL 30 V (D-S) MOSFET 150C
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
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Технічний опис SIRA62DDP-T1-UE3 Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150C, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc), Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 71W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V.
Інші пропозиції SIRA62DDP-T1-UE3
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SIRA62DDP-T1-UE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 30 V (D-S) MOSFET 150C Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc) Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V |
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