SIRA88BDP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
| Кількість | Ціна |
|---|---|
| 3000+ | 15.02 грн |
| 6000+ | 13.53 грн |
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Технічний опис SIRA88BDP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 17W (Tc), Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V.
Інші пропозиції SIRA88BDP-T1-GE3 за ціною від 9.99 грн до 46.92 грн
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SIRA88BDP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 19A/40A PPAK SO8 Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 17W (Tc) Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SIRA88BDP-T1-GE3 | Vishay / Siliconix |
MOSFETs PPAKSO8 N-CH 30V 19A |
на замовлення 5948 шт: термін постачання 21-30 дні (днів) |
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| SIRA88BDP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 42.42 грн |
| 10+ | 35.02 грн |
| 100+ | 26.13 грн |
| 500+ | 19.27 грн |
| 1000+ | 14.89 грн |
| SIRA88BDP-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs PPAKSO8 N-CH 30V 19A
MOSFETs PPAKSO8 N-CH 30V 19A
на замовлення 5948 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.92 грн |
| 11+ | 29.63 грн |
| 100+ | 18.29 грн |
| 500+ | 14.80 грн |
| 1000+ | 13.27 грн |
| 3000+ | 10.40 грн |
| 9000+ | 9.99 грн |