SIRA99DP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 47.9A/195A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.35W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Технічний опис SIRA99DP-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 47.9A/195A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +16V, -20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 6.35W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIRA99DP-T1-GE3 за ціною від 80.24 грн до 241.14 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIRA99DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 47.9A/195A PPAKInput Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 6.35W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc) Vgs (Max): +16V, -20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 6387 шт: термін постачання 21-31 дні (днів) |
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SIRA99DP-T1-GE3 | Vishay Semiconductors |
MOSFETs PPAKSO8 P-CH 30V 47.9A |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
|
| SIRA99DP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 47.9A/195A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.35W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc)
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 47.9A/195A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.35W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc)
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 6387 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 212.10 грн |
| 10+ | 149.02 грн |
| 100+ | 113.36 грн |
| 500+ | 86.59 грн |
| 1000+ | 80.24 грн |
| SIRA99DP-T1-GE3 |
![]() |
Виробник: Vishay Semiconductors
MOSFETs PPAKSO8 P-CH 30V 47.9A
MOSFETs PPAKSO8 P-CH 30V 47.9A
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 241.14 грн |
| 10+ | 155.79 грн |
| 100+ | 94.27 грн |
| 500+ | 81.70 грн |
| 3000+ | 81.00 грн |



