SIRC04DP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 15A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
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Технічний опис SIRC04DP-T1-GE3 Vishay Siliconix
Description: VISHAY - SIRC04DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 2450 µohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 60A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 2.1V, Verlustleistung: 50W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 2450µohm.
Інші пропозиції SIRC04DP-T1-GE3 за ціною від 57.93 грн до 202.03 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIRC04DP-T1-GE3 | VISHAY |
Description: VISHAY - SIRC04DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 2450 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.1V Verlustleistung: 50W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2450µohm |
на замовлення 640 шт: термін постачання 21-31 дні (днів) |
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SIRC04DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 50W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 2.45mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 5978 шт: термін постачання 21-31 дні (днів) |
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SIRC04DP-T1-GE3 | Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 457 шт: термін постачання 21-30 дні (днів) |
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SIRC04DP-T1-GE3 | VISHAY |
Description: VISHAY - SIRC04DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 2450 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.1V Verlustleistung: 50W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2450µohm |
на замовлення 640 шт: термін постачання 21-31 дні (днів) |
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Виробник: VISHAY
Description: VISHAY - SIRC04DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 2450 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.1V
Verlustleistung: 50W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2450µohm
Description: VISHAY - SIRC04DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 2450 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.1V
Verlustleistung: 50W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2450µohm
на замовлення 640 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 89.61 грн |
| 500+ | 67.02 грн |
| SIRC04DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 50W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 50W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 5978 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 130.40 грн |
| 10+ | 112.79 грн |
| 100+ | 90.69 грн |
| 500+ | 69.92 грн |
| 1000+ | 57.93 грн |
| SIRC04DP-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
на замовлення 457 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 133.60 грн |
| 10+ | 119.65 грн |
| 25+ | 98.46 грн |
| 100+ | 83.79 грн |
| SIRC04DP-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIRC04DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 2450 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.1V
Verlustleistung: 50W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2450µohm
Description: VISHAY - SIRC04DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 2450 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.1V
Verlustleistung: 50W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2450µohm
на замовлення 640 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 202.03 грн |
| 10+ | 131.16 грн |
| 100+ | 89.61 грн |
| 500+ | 67.02 грн |