Інші пропозиції SIRC16DP-T1-GE3 за ціною від 36.24 грн до 157.11 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SiRC16DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 25V 60A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V Power Dissipation (Max): 54.3W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
SiRC16DP-T1-GE3 | Vishay Semiconductors |
MOSFET 25V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 6489 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
SiRC16DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 25V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V Power Dissipation (Max): 54.3W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V |
на замовлення 18082 шт: термін постачання 21-31 дні (днів) |
|
| SiRC16DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 44.66 грн |
| 6000+ | 41.85 грн |
| SiRC16DP-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFET 25V Vds 20V Vgs PowerPAK SO-8
MOSFET 25V Vds 20V Vgs PowerPAK SO-8
на замовлення 6489 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 92.06 грн |
| 10+ | 74.20 грн |
| 100+ | 50.28 грн |
| 500+ | 42.59 грн |
| 1000+ | 36.24 грн |
| SiRC16DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
на замовлення 18082 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 157.11 грн |
| 10+ | 96.68 грн |
| 100+ | 65.83 грн |
| 500+ | 49.39 грн |
| 1000+ | 48.07 грн |