SIRS5800DP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V
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Технічний опис SIRS5800DP-T1-GE3 Vishay Siliconix
Description: VISHAY - SIRS5800DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 265 A, 1800 µohm, PowerPAK SO-8S, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 265A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 240W, Bauform - Transistor: PowerPAK SO-8S, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen V Series, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1800µohm, SVHC: Lead (25-Jun-2025).
Інші пропозиції SIRS5800DP-T1-GE3 за ціною від 89.38 грн до 294.09 грн
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SIRS5800DP-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Power Dissipation (Max): 7.4W (Ta), 240W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V |
на замовлення 8694 шт: термін постачання 21-31 дні (днів) |
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SIRS5800DP-T1-GE3 | Vishay / Siliconix |
MOSFETs N-Channel 80 V (D-S) MOSFET |
на замовлення 9130 шт: термін постачання 21-30 дні (днів) |
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SIRS5800DP-T1-GE3 | VISHAY |
Description: VISHAY - SIRS5800DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 265 A, 1800 µohm, PowerPAK SO-8S, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 265A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 240W Bauform - Transistor: PowerPAK SO-8S Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen V Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1800µohm SVHC: Lead (25-Jun-2025) |
на замовлення 5880 шт: термін постачання 21-31 дні (днів) |
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| SIRS5800DP-T1-GE3 |
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Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V
на замовлення 8694 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 282.02 грн |
| 10+ | 178.83 грн |
| 100+ | 126.03 грн |
| 500+ | 107.31 грн |
| SIRS5800DP-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs N-Channel 80 V (D-S) MOSFET
MOSFETs N-Channel 80 V (D-S) MOSFET
на замовлення 9130 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 292.46 грн |
| 10+ | 190.32 грн |
| 100+ | 116.61 грн |
| 500+ | 105.44 грн |
| 1000+ | 101.25 грн |
| 3000+ | 92.17 грн |
| 6000+ | 89.38 грн |
| SIRS5800DP-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIRS5800DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 265 A, 1800 µohm, PowerPAK SO-8S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 265A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 240W
Bauform - Transistor: PowerPAK SO-8S
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen V Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1800µohm
SVHC: Lead (25-Jun-2025)
Description: VISHAY - SIRS5800DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 265 A, 1800 µohm, PowerPAK SO-8S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 265A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 240W
Bauform - Transistor: PowerPAK SO-8S
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen V Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1800µohm
SVHC: Lead (25-Jun-2025)
на замовлення 5880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 294.09 грн |
| 10+ | 193.89 грн |
| 100+ | 136.86 грн |
| 500+ | 114.98 грн |
| 1000+ | 101.95 грн |