SIRS580DPW-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.9W (Ta), 171W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 75.78 грн |
| 6000+ | 71.51 грн |
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Технічний опис SIRS580DPW-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 6.9W (Ta), 171W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 190A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIRS580DPW-T1-RE3 за ціною від 70.11 грн до 148.47 грн
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SIRS580DPW-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 80-V (D-S) MOSFET Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 6.9W (Ta), 171W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 190A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
| SIRS580DPW-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.9W (Ta), 171W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: N-CHANNEL 80-V (D-S) MOSFET
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.9W (Ta), 171W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 148.47 грн |
| 10+ | 105.68 грн |
| 25+ | 96.37 грн |
| 100+ | 80.87 грн |
| 250+ | 76.30 грн |
| 500+ | 73.55 грн |
| 1000+ | 70.11 грн |