SIS106DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 9.8A/16A PPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Відгуки про товар
Написати відгук
Технічний опис SIS106DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 9.8A/16A PPAK, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 24W (Tc), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V.
Інші пропозиції SIS106DN-T1-GE3 за ціною від 28.87 грн до 133.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIS106DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 9.8A/16A PPAK Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
на замовлення 4890 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
SIS106DN-T1-GE3 | Vishay / Siliconix |
MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 |
на замовлення 19384 шт: термін постачання 21-30 дні (днів) |
|
| SIS106DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 9.8A/16A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 9.8A/16A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
на замовлення 4890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 72.27 грн |
| 10+ | 57.26 грн |
| 100+ | 44.56 грн |
| 500+ | 35.44 грн |
| 1000+ | 28.87 грн |
| SIS106DN-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8
на замовлення 19384 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 133.60 грн |
| 10+ | 84.32 грн |
| 100+ | 48.95 грн |
| 500+ | 38.68 грн |
| 1000+ | 35.40 грн |
| 3000+ | 33.80 грн |