SIS126DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 12A/45.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис SIS126DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 80V 12A/45.1A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIS126DN-T1-GE3 за ціною від 24.16 грн до 88.80 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIS126DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 12A/45.1A PPAK Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
на замовлення 5169 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
SIS126DN-T1-GE3 | Vishay / Siliconix |
MOSFETs POWER P AKNC HAN80V |
на замовлення 5970 шт: термін постачання 21-30 дні (днів) |
|
| SIS126DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 12A/45.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 12A/45.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
на замовлення 5169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 84.84 грн |
| 10+ | 54.84 грн |
| 100+ | 41.64 грн |
| 500+ | 31.75 грн |
| 1000+ | 27.99 грн |
| SIS126DN-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs POWER P AKNC HAN80V
MOSFETs POWER P AKNC HAN80V
на замовлення 5970 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.80 грн |
| 10+ | 58.78 грн |
| 100+ | 38.82 грн |
| 500+ | 32.19 грн |
| 1000+ | 26.81 грн |
| 3000+ | 24.58 грн |
| 6000+ | 24.16 грн |