SIS184LDN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
FET Type: N-Channel
| Кількість | Ціна |
|---|---|
| 3000+ | 54.55 грн |
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Технічний опис SIS184LDN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc), FET Type: N-Channel.
Інші пропозиції SIS184LDN-T1-GE3 за ціною від 43.67 грн до 159.02 грн
| Фото | Назва | Виробник | Інформація |
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SIS184LDN-T1-GE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 |
на замовлення 5997 шт: термін постачання 21-31 дні (днів) |
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SIS184LDN-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs POWRPK N CHAN 60V |
на замовлення 17550 шт: термін постачання 21-30 дні (днів) |
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