SIS184LDN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
FET Type: N-Channel
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Технічний опис SIS184LDN-T1-GE3 Vishay Siliconix
Description: VISHAY - SIS184LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 69.4 A, 5400 µohm, PowerPAK 1212, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 69.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 52W, SVHC: Lead (21-Jan-2025), Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 5400µohm.
Інші пропозиції SIS184LDN-T1-GE3 за ціною від 41.08 грн до 173.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SIS184LDN-T1-GE3 | VISHAY |
Description: VISHAY - SIS184LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 69.4 A, 5400 µohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 69.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 52W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5400µohm |
на замовлення 5264 шт: термін постачання 21-31 дні (днів) |
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SIS184LDN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 |
на замовлення 5997 шт: термін постачання 21-31 дні (днів) |
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SIS184LDN-T1-GE3 | Vishay Semiconductors |
MOSFETs POWRPK N CHAN 60V |
на замовлення 17550 шт: термін постачання 21-30 дні (днів) |
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SIS184LDN-T1-GE3 | VISHAY |
Description: VISHAY - SIS184LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 69.4 A, 5400 µohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 69.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 52W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5400µohm |
на замовлення 5264 шт: термін постачання 21-31 дні (днів) |
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| SIS184LDN-T1-GE3 |
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Виробник: VISHAY
Description: VISHAY - SIS184LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 69.4 A, 5400 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 69.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 52W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5400µohm
Description: VISHAY - SIS184LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 69.4 A, 5400 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 69.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 52W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5400µohm
на замовлення 5264 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 76.19 грн |
| 500+ | 51.68 грн |
| 1000+ | 43.91 грн |
| 5000+ | 41.08 грн |
| SIS184LDN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
на замовлення 5997 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.38 грн |
| 10+ | 96.10 грн |
| 100+ | 76.46 грн |
| 500+ | 60.72 грн |
| 1000+ | 51.52 грн |
| SIS184LDN-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs POWRPK N CHAN 60V
MOSFETs POWRPK N CHAN 60V
на замовлення 17550 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.86 грн |
| 10+ | 103.21 грн |
| 100+ | 62.06 грн |
| 250+ | 61.99 грн |
| 500+ | 50.12 грн |
| 1000+ | 46.32 грн |
| 3000+ | 43.35 грн |
| SIS184LDN-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIS184LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 69.4 A, 5400 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 69.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 52W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5400µohm
Description: VISHAY - SIS184LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 69.4 A, 5400 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 69.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 52W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5400µohm
на замовлення 5264 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 173.16 грн |
| 10+ | 111.14 грн |
| 100+ | 76.19 грн |
| 500+ | 51.68 грн |
| 1000+ | 43.91 грн |
| 5000+ | 41.08 грн |