SIS424DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 20V 35A PPAK 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 39W (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).