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Технічний опис SIS439DNT-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 30V 50A PPAK1212-8S, Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8S, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8S, Packaging: Tape & Reel (TR).
Інші пропозиції SIS439DNT-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SIS439DNT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 30V 50A PPAK1212-8SInput Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8S Packaging: Tape & Reel (TR) |
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SIS439DNT-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 50A PPAK1212-8S Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8S Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V |
товару немає в наявності |
В кошику од. на суму грн. |
| SIS439DNT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK1212-8S
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 50A PPAK1212-8S
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SIS439DNT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK1212-8S
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Description: MOSFET P-CH 30V 50A PPAK1212-8S
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
товару немає в наявності
В кошику
од. на суму грн.