SIS444DN-T1-GE3 Vishay Semiconductors
на замовлення 3472 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.34 грн |
| 10+ | 41.84 грн |
| 100+ | 28.84 грн |
| 500+ | 26.17 грн |
| 1000+ | 23.1 грн |
| 3000+ | 20.56 грн |
| 6000+ | 19.36 грн |
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Технічний опис SIS444DN-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 10A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3065 pF @ 15 V.
Інші пропозиції SIS444DN-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SIS444DN-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R |
товар відсутній |
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| SIS444DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 70A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIS444DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3065 pF @ 15 V |
товар відсутній |
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| SIS444DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 70A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |