SIS4604LDN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 45.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
| Кількість | Ціна |
|---|---|
| 3000+ | 26.34 грн |
| 6000+ | 24.16 грн |
| 9000+ | 23.05 грн |
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Технічний опис SIS4604LDN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 45.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Інші пропозиції SIS4604LDN-T1-GE3 за ціною від 21.85 грн до 103.61 грн
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SIS4604LDN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 45.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V |
на замовлення 14527 шт: термін постачання 21-31 дні (днів) |
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SIS4604LDN-T1-GE3 | Vishay |
MOSFETs PPAK1212 N-CH 60V 15.1A |
на замовлення 5491 шт: термін постачання 21-30 дні (днів) |
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| SIS4604LDN-T1-GE3 |
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Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 45.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 45.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
на замовлення 14527 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 63.43 грн |
| 10+ | 50.17 грн |
| 100+ | 39.03 грн |
| 500+ | 31.04 грн |
| 1000+ | 25.29 грн |
| SIS4604LDN-T1-GE3 |
|
Виробник: Vishay
MOSFETs PPAK1212 N-CH 60V 15.1A
MOSFETs PPAK1212 N-CH 60V 15.1A
на замовлення 5491 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 103.61 грн |
| 10+ | 64.20 грн |
| 100+ | 37.00 грн |
| 500+ | 29.25 грн |
| 1000+ | 28.47 грн |
| 3000+ | 24.18 грн |
| 6000+ | 21.85 грн |