SIS4608DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 35.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис SIS4608DN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc), Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 35.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIS4608DN-T1-GE3 за ціною від 23.58 грн до 62.74 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIS4608DN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 35.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4V @ 250µA |
на замовлення 5855 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
SIS4608DN-T1-GE3 | Vishay |
MOSFET N-CHANNEL 60 V MOSFET PWRPAK |
на замовлення 2850 шт: термін постачання 21-30 дні (днів) |
|
| SIS4608DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 35.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 35.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
на замовлення 5855 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.06 грн |
| 10+ | 51.08 грн |
| 100+ | 35.34 грн |
| 500+ | 27.71 грн |
| 1000+ | 23.58 грн |
| SIS4608DN-T1-GE3 |
|
Виробник: Vishay
MOSFET N-CHANNEL 60 V MOSFET PWRPAK
MOSFET N-CHANNEL 60 V MOSFET PWRPAK
на замовлення 2850 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 62.74 грн |
| 10+ | 54.63 грн |
| 100+ | 32.42 грн |
| 500+ | 28.05 грн |
| 3000+ | 23.82 грн |