SIS478DN-T1-GE3

Description: MOSFET N-CH 30V 12A PPAK1212-8, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 15.6W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.