SIS606BDN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 42.03 грн |
| 6000+ | 38.55 грн |
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Технічний опис SIS606BDN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIS606BDN-T1-GE3 за ціною від 40.35 грн до 101.04 грн
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SIS606BDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
на замовлення 6370 шт: термін постачання 21-31 дні (днів) |
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SIS606BDN-T1-GE3 | Vishay / Siliconix |
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 |
на замовлення 110544 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SIS606BDN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
на замовлення 6370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.04 грн |
| 10+ | 80.12 грн |
| 100+ | 62.27 грн |
| 500+ | 49.53 грн |
| 1000+ | 40.35 грн |
| SIS606BDN-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
на замовлення 110544 шт:
термін постачання 21-30 дні (днів)