SIS888DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 20.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 40.43 грн |
| 6000+ | 37.38 грн |
Відгуки про товар
Написати відгук
Технічний опис SIS888DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 150V 20.2A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8S, Vgs(th) (Max) @ Id: 4.2V @ 250µA, Power Dissipation (Max): 52W (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TA), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8S, Packaging: Tape & Reel (TR).
Інші пропозиції SIS888DN-T1-GE3 за ціною від 36.45 грн до 153.83 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIS888DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 20.2A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 75 V |
на замовлення 7062 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
SIS888DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S |
на замовлення 4012 шт: термін постачання 21-30 дні (днів) |
|
| SIS888DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 20.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 75 V
Description: MOSFET N-CH 150V 20.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 75 V
на замовлення 7062 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 142.90 грн |
| 10+ | 88.25 грн |
| 100+ | 59.90 грн |
| 500+ | 45.11 грн |
| 1000+ | 42.94 грн |
| SIS888DN-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S
MOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S
на замовлення 4012 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.83 грн |
| 10+ | 97.65 грн |
| 100+ | 58.75 грн |
| 500+ | 47.70 грн |
| 1000+ | 42.11 грн |
| 3000+ | 38.04 грн |
| 6000+ | 36.45 грн |