SIS902DN-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET 2N-CH 75V 4A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.4W
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 38V
Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
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Технічний опис SIS902DN-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 75V 4A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 15.4W, Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 38V, Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
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SIS902DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 75V 4A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 15.4W Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 38V Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
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