SIS932EDN-T1-GE3 Vishay / Siliconix
на замовлення 17787 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.58 грн |
| 10+ | 34.47 грн |
| 100+ | 22.37 грн |
| 500+ | 17.96 грн |
| 1000+ | 15.15 грн |
| 9000+ | 11.82 грн |
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Технічний опис SIS932EDN-T1-GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W (Ta), 23W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.
Інші пропозиції SIS932EDN-T1-GE3 за ціною від 13.24 грн до 13.24 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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| SIS932EDN-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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| SIS932EDN-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 40A Power dissipation: 14.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 26mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIS932EDN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6A PPAK 1212 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
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SIS932EDN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
товар відсутній |
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| SIS932EDN-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 40A Power dissipation: 14.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 26mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |