SISA18BDN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8PT
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Технічний опис SISA18BDN-T1-GE3 Vishay Siliconix
Description: VISHAY - SISA18BDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 6830 µohm, PowerPAK 1212, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 60A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 2.4V, Verlustleistung: 36.8W, SVHC: Lead (21-Jan-2025), Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 6830µohm.
Інші пропозиції SISA18BDN-T1-GE3 за ціною від 18.46 грн до 86.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SISA18BDN-T1-GE3 | VISHAY |
Description: VISHAY - SISA18BDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 6830 µohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung: 36.8W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 6830µohm |
на замовлення 5665 шт: термін постачання 21-31 дні (днів) |
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SISA18BDN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 30 V (D-S) MOSFET POWE Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8PT Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 36.8W (Tc) Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V |
на замовлення 5839 шт: термін постачання 21-31 дні (днів) |
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SISA18BDN-T1-GE3 | VISHAY |
Description: VISHAY - SISA18BDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 6830 µohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung: 36.8W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 6830µohm |
на замовлення 5665 шт: термін постачання 21-31 дні (днів) |
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SISA18BDN-T1-GE3 | Vishay Semiconductors |
MOSFETs PPAK1212 N-CH 30V 18A |
на замовлення 8575 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SISA18BDN-T1-GE3 |
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Виробник: VISHAY
Description: VISHAY - SISA18BDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 6830 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.4V
Verlustleistung: 36.8W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 6830µohm
Description: VISHAY - SISA18BDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 6830 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.4V
Verlustleistung: 36.8W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 6830µohm
на замовлення 5665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 35.36 грн |
| 500+ | 25.44 грн |
| 1000+ | 21.32 грн |
| 5000+ | 18.46 грн |
| SISA18BDN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8PT
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8PT
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
на замовлення 5839 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.03 грн |
| 10+ | 45.74 грн |
| 100+ | 29.96 грн |
| 500+ | 21.73 грн |
| 1000+ | 19.67 грн |
| SISA18BDN-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SISA18BDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 6830 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.4V
Verlustleistung: 36.8W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 6830µohm
Description: VISHAY - SISA18BDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 6830 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.4V
Verlustleistung: 36.8W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 6830µohm
на замовлення 5665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 86.16 грн |
| 16+ | 53.81 грн |
| 100+ | 35.36 грн |
| 500+ | 25.44 грн |
| 1000+ | 21.32 грн |
| 5000+ | 18.46 грн |
| SISA18BDN-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs PPAK1212 N-CH 30V 18A
MOSFETs PPAK1212 N-CH 30V 18A
на замовлення 8575 шт:
термін постачання 21-30 дні (днів)