SISF02DN-T1-GE3 Vishay Semiconductors
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.76 грн |
| 10+ | 90.50 грн |
| 100+ | 62.48 грн |
| 500+ | 52.95 грн |
| 1000+ | 43.15 грн |
| 3000+ | 40.66 грн |
| 6000+ | 38.94 грн |
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Технічний опис SISF02DN-T1-GE3 Vishay Semiconductors
Description: MOSFET DUAL N-CH 25V 1212-8, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8SCD, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc), Drain to Source Voltage (Vdss): 25V, Power - Max: 5.2W (Ta), 69.4W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SCD, Packaging: Tape & Reel (TR).
Інші пропозиції SISF02DN-T1-GE3 за ціною від 97.37 грн до 113.39 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
| SISF02DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET DUAL N-CH 25V 1212-8Part Status: Active Supplier Device Package: PowerPAK® 1212-8SCD Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc) Drain to Source Voltage (Vdss): 25V Power - Max: 5.2W (Ta), 69.4W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Packaging: Cut Tape (CT) |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
|
| SISF02DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET DUAL N-CH 25V 1212-8
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Cut Tape (CT)
Description: MOSFET DUAL N-CH 25V 1212-8
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Cut Tape (CT)
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.39 грн |
| 10+ | 97.37 грн |