SISF20DN-T1-GE3 Vishay Semiconductors
на замовлення 2759 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.38 грн |
| 10+ | 91.36 грн |
| 100+ | 63.36 грн |
| 250+ | 58.08 грн |
| 500+ | 52.74 грн |
| 1000+ | 45.2 грн |
| 3000+ | 42.93 грн |
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Технічний опис SISF20DN-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SCD Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 5.2W (Ta), 69.4W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V, Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SCD Dual.
Інші пропозиції SISF20DN-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SISF20DN-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R |
товар відсутній |
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SISF20DN-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R |
товар відсутній |
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| SISF20DN-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Pulsed drain current: 100A Power dissipation: 44.4W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 18.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SISF20DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SCD Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5.2W (Ta), 69.4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8SCD Dual |
товар відсутній |
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SISF20DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SCD Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5.2W (Ta), 69.4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8SCD Dual |
товар відсутній |
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| SISF20DN-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Pulsed drain current: 100A Power dissipation: 44.4W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 18.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |