SISF20DN-T1-GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 2+ | 185.79 грн |
| 10+ | 117.56 грн |
| 100+ | 70.24 грн |
| 500+ | 58.83 грн |
| 1000+ | 52.09 грн |
| 3000+ | 49.30 грн |
| 6000+ | 48.33 грн |
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Технічний опис SISF20DN-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12, Supplier Device Package: PowerPAK® 1212-8SCD Dual, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 5.2W (Ta), 69.4W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SCD Dual, Packaging: Tape & Reel (TR).
Інші пропозиції SISF20DN-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SISF20DN-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R |
товару немає в наявності |
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SISF20DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12 Supplier Device Package: PowerPAK® 1212-8SCD Dual Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 5.2W (Ta), 69.4W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Dual Packaging: Tape & Reel (TR) |
товару немає в наявності |
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SISF20DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12 Supplier Device Package: PowerPAK® 1212-8SCD Dual Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 5.2W (Ta), 69.4W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Dual Packaging: Cut Tape (CT) |
товару немає в наявності |
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| SISF20DN-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Pulsed drain current: 100A Power dissipation: 44.4W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 18.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |