| Кількість | Ціна |
|---|---|
| 3+ | 155.41 грн |
| 10+ | 96.46 грн |
| 100+ | 54.84 грн |
| 500+ | 43.49 грн |
| 1000+ | 39.89 грн |
| 3000+ | 33.90 грн |
| 6000+ | 33.13 грн |
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Технічний опис SISF54DN-T1-GE3 Vishay
Description: COMMON-DRAIN DUAL N-CH 30V (S1-S, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SCD, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 5.2W (Ta), 69.4W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 118A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V, Rds On (Max) @ Id, Vgs: 3.1mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SCD.
Інші пропозиції SISF54DN-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| SISF54DN-T1-GE3 | Vishay Siliconix |
 Description: COMMON-DRAIN DUAL N-CH 30V (S1-SPackaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SCD Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5.2W (Ta), 69.4W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 118A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SCD |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. |
| SISF54DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 118A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 118A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.