SISH106DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A PPAK
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
| Кількість | Ціна |
|---|---|
| 3000+ | 45.09 грн |
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Технічний опис SISH106DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A PPAK, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SH, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8SH.
Інші пропозиції SISH106DN-T1-GE3 за ціною від 42.98 грн до 167.94 грн
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SISH106DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 20V 12.5A PPAK Part Status: Active Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
на замовлення 5606 шт: термін постачання 21-31 дні (днів) |
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SISH106DN-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs 20V Vds; +/-12V Vgs PowerPAK 1212-8SH |
на замовлення 2446 шт: термін постачання 21-30 дні (днів) |
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| SISH106DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W Type of transistor: N-MOSFET Case: PowerPAK® 1212-8 Kind of package: reel; tape Technology: TrenchFET® Mounting: SMD Polarisation: unipolar Gate charge: 27nC On-state resistance: 9.8mΩ Power dissipation: 2W Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 60A Drain current: 15.6A Kind of channel: enhancement |
товару немає в наявності |