SISH108DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
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Технічний опис SISH108DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8SH, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8SH, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SH, Packaging: Tape & Reel (TR).
Інші пропозиції SISH108DN-T1-GE3 за ціною від 16.47 грн до 50.18 грн
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SISH108DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 14A PPAK1212-8SH Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V |
на замовлення 5871 шт: термін постачання 21-31 дні (днів) |
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SISH108DN-T1-GE3 | Vishay Semiconductors |
MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH |
на замовлення 5175 шт: термін постачання 21-30 дні (днів) |
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| SISH108DN-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8SH
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Description: MOSFET N-CH 20V 14A PPAK1212-8SH
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
на замовлення 5871 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.19 грн |
| 17+ | 18.55 грн |
| 100+ | 16.47 грн |
| SISH108DN-T1-GE3 |
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Виробник: Vishay Semiconductors
MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH
MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH
на замовлення 5175 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.18 грн |
| 10+ | 43.43 грн |
| 100+ | 26.23 грн |
| 500+ | 21.95 грн |
| 1000+ | 19.47 грн |
| 9000+ | 19.05 грн |
| 24000+ | 18.71 грн |