SISH407DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 15.4A/25A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 93.8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 21.68 грн |
| 6000+ | 19.34 грн |
| 9000+ | 18.55 грн |
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Технічний опис SISH407DN-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 15.4A/25A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V, Power Dissipation (Max): 3.6W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 93.8 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 10 V.
Інші пропозиції SISH407DN-T1-GE3 за ціною від 19.47 грн до 94.23 грн
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SISH407DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 15.4A/25A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V Power Dissipation (Max): 3.6W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 93.8 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 10 V |
на замовлення 16570 шт: термін постачання 21-31 дні (днів) |
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SISH407DN-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH |
на замовлення 24125 шт: термін постачання 21-30 дні (днів) |
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| SISH407DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 15.4A/25A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 93.8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 10 V
Description: MOSFET P-CH 20V 15.4A/25A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 93.8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 10 V
на замовлення 16570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 51.30 грн |
| 100+ | 33.85 грн |
| 500+ | 24.73 грн |
| 1000+ | 22.47 грн |
| SISH407DN-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH
MOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH
на замовлення 24125 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.23 грн |
| 10+ | 58.51 грн |
| 100+ | 33.62 грн |
| 500+ | 26.16 грн |
| 1000+ | 23.82 грн |
| 3000+ | 20.64 грн |
| 6000+ | 19.47 грн |