SISH434DN-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 40V 17.6A/35A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 34.11 грн |
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Технічний опис SISH434DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 17.6A/35A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V.
Інші пропозиції SISH434DN-T1-GE3 за ціною від 33.14 грн до 106.57 грн
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SISH434DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 17.6A/35A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V |
на замовлення 5695 шт: термін постачання 21-31 дні (днів) |
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SISH434DN-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs 40V Vds; +/-20V Vgs PowerPAK 1212-8SH |
на замовлення 18084 шт: термін постачання 21-30 дні (днів) |
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| SISH434DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 35A; Idm: 60A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 60A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
товару немає в наявності |