SISHA06DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис SISHA06DN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE, Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8SH, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SH, Packaging: Tape & Reel (TR).
Інші пропозиції SISHA06DN-T1-GE3 за ціною від 25.00 грн до 101.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SISHA06DN-T1-GE3 | Vishay Semiconductors |
MOSFET N-Channel 30 V (D-S) MOSFET SH, 3 mO 10V, 4 mO 4.5V |
на замовлення 11939 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
SISHA06DN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 30 V (D-S) MOSFET POWE Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Cut Tape (CT) |
на замовлення 11905 шт: термін постачання 21-31 дні (днів) |
|
| SISHA06DN-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFET N-Channel 30 V (D-S) MOSFET SH, 3 mO 10V, 4 mO 4.5V
MOSFET N-Channel 30 V (D-S) MOSFET SH, 3 mO 10V, 4 mO 4.5V
на замовлення 11939 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 74.22 грн |
| 10+ | 60.23 грн |
| 100+ | 40.71 грн |
| 500+ | 34.56 грн |
| 1000+ | 29.47 грн |
| 3000+ | 25.00 грн |
| SISHA06DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Cut Tape (CT)
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Cut Tape (CT)
на замовлення 11905 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 101.34 грн |
| 10+ | 58.17 грн |
| 100+ | 45.48 грн |
| 500+ | 33.61 грн |
| 1000+ | 30.65 грн |