на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6000+ | 15.2 грн |
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Технічний опис SISHA14DN-T1-GE3 Vishay
Description: MOSFET N-CH 30V 19.7A/20A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V.
Інші пропозиції SISHA14DN-T1-GE3 за ціною від 13.56 грн до 44.64 грн
| Фото | Назва | Виробник | Інформація |
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SISHA14DN-T1-GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 30V 19.7A/20A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V |
на замовлення 4254 шт: термін постачання 21-31 дні (днів) |
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SISHA14DN-T1-GE3 | Виробник : Vishay / Siliconix |
MOSFET 30V N-CHANNEL (D-S) FAST SWITC |
на замовлення 7568 шт: термін постачання 21-30 дні (днів) |
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| SISHA14DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 80A Power dissipation: 17W Case: PowerPAK® 1212-8 Gate-source voltage: ±20/±-16V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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SISHA14DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 19.7A/20A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V |
товар відсутній |
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| SISHA14DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 80A Power dissipation: 17W Case: PowerPAK® 1212-8 Gate-source voltage: ±20/±-16V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |