SISS12DN-T1-GE3 Vishay Semiconductors
на замовлення 6433 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 104.46 грн |
| 10+ | 73.68 грн |
| 100+ | 51.59 грн |
| 500+ | 43.15 грн |
| 1000+ | 37.21 грн |
| 3000+ | 35.81 грн |
| 9000+ | 30.60 грн |
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Технічний опис SISS12DN-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 40V 37.5A/60A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V.
Інші пропозиції SISS12DN-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SISS12DN-T1-GE3 | Виробник : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 200A; 42W Mounting: SMD Pulsed drain current: 200A Case: PowerPAK® 1212-8 Drain-source voltage: 40V Drain current: 60A On-state resistance: 2.74mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 89nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: -16...20V кількість в упаковці: 1 шт |
товару немає в наявності |
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SISS12DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 37.5A/60A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V |
товару немає в наявності |
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SISS12DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 37.5A/60A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V |
товару немає в наявності |
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| SISS12DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 200A; 42W Mounting: SMD Pulsed drain current: 200A Case: PowerPAK® 1212-8 Drain-source voltage: 40V Drain current: 60A On-state resistance: 2.74mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 89nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: -16...20V |
товару немає в наявності |