SISS30LDN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 16A/55.5A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 33.83 грн |
| 6000+ | 30.39 грн |
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Технічний опис SISS30LDN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 80V 16A/55.5A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8S, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8S, Packaging: Tape & Reel (TR).
Інші пропозиції SISS30LDN-T1-GE3 за ціною від 34.84 грн до 104.25 грн
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SISS30LDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 16A/55.5A PPAK Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8S Packaging: Cut Tape (CT) |
на замовлення 8985 шт: термін постачання 21-31 дні (днів) |
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SISS30LDN-T1-GE3 | Vishay Semiconductors |
MOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8S |
на замовлення 3716 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SISS30LDN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 16A/55.5A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 16A/55.5A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
на замовлення 8985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.25 грн |
| 10+ | 71.93 грн |
| 100+ | 50.99 грн |
| 500+ | 37.87 грн |
| 1000+ | 34.84 грн |
| SISS30LDN-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8S
MOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8S
на замовлення 3716 шт:
термін постачання 21-30 дні (днів)