SISS30LDN-T1-UE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 79.58 грн |
| 10+ | 54.79 грн |
| 25+ | 49.47 грн |
| 100+ | 40.94 грн |
| 250+ | 38.33 грн |
| 500+ | 36.75 грн |
| 1000+ | 34.86 грн |
| 2500+ | 33.51 грн |
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Технічний опис SISS30LDN-T1-UE3 Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V.
Інші пропозиції SISS30LDN-T1-UE3
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SISS30LDN-T1-UE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET 150 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V |
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