SISS40DN-T1-GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SISS40DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 36.5 A, 0.0176 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 36.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 52W
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: ThunderFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0176ohm
SVHC: Lead (07-Nov-2024)
| Кількість | Ціна |
|---|---|
| 14+ | 59.50 грн |
| 17+ | 49.54 грн |
| 100+ | 42.17 грн |
| 500+ | 37.36 грн |
| 1000+ | 33.03 грн |
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Технічний опис SISS40DN-T1-GE3 VISHAY
Description: VISHAY - SISS40DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 36.5 A, 0.0176 ohm, PowerPAK 1212, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 36.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.5V, euEccn: NLR, Verlustleistung: 52W, Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: ThunderFET, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0176ohm, SVHC: Lead (07-Nov-2024).
Інші пропозиції SISS40DN-T1-GE3 за ціною від 27.96 грн до 124.66 грн
| Фото | Назва | Виробник | Інформація |
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SISS40DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 36.5A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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SISS40DN-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S |
на замовлення 9218 шт: термін постачання 21-30 дні (днів) |
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SISS40DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 36.5A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V |
товару немає в наявності |
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| SISS40DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 29A; Idm: 60A; 33W Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerPAK® 1212-8 Technology: TrenchFET® Gate charge: 24nC On-state resistance: 26mΩ Power dissipation: 33W Gate-source voltage: ±20V Drain current: 29A Pulsed drain current: 60A Drain-source voltage: 100V Polarisation: unipolar |
товару немає в наявності |