SISS42DN-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 100V 11.8/40.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 45.20 грн |
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Технічний опис SISS42DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 11.8/40.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V.
Інші пропозиції SISS42DN-T1-GE3 за ціною від 42.47 грн до 172.86 грн
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SISS42DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 11.8/40.5A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V |
на замовлення 5955 шт: термін постачання 21-31 дні (днів) |
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SISS42DN-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S |
на замовлення 17386 шт: термін постачання 21-30 дні (днів) |
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| SISS42DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 32.4A; Idm: 80A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: TrenchFET® Gate charge: 38nC On-state resistance: 17mΩ Power dissipation: 36W Gate-source voltage: ±20V Drain current: 32.4A Pulsed drain current: 80A Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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| SISS42DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 32.4A; Idm: 80A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: TrenchFET® Gate charge: 38nC On-state resistance: 17mΩ Power dissipation: 36W Gate-source voltage: ±20V Drain current: 32.4A Pulsed drain current: 80A Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |