SISS42LDN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 11.3A/39A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2058 pF @ 50 V
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Технічний опис SISS42LDN-T1-GE3 Vishay Siliconix
Description: VISHAY - SISS42LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 39 A, 0.0149 ohm, PowerPAK 1212, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 39A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 2.5V, Verlustleistung: 57W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0149ohm.
Інші пропозиції SISS42LDN-T1-GE3 за ціною від 32.89 грн до 171.08 грн
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SISS42LDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 11.3A/39A PPAK Input Capacitance (Ciss) (Max) @ Vds: 2058 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 14.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8S Packaging: Cut Tape (CT) |
на замовлення 13347 шт: термін постачання 21-31 дні (днів) |
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SISS42LDN-T1-GE3 | Vishay Semiconductors |
MOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S |
на замовлення 23626 шт: термін постачання 21-30 дні (днів) |
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SISS42LDN-T1-GE3 | VISHAY |
Description: VISHAY - SISS42LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 39 A, 0.0149 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 39A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 57W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0149ohm |
на замовлення 1003 шт: термін постачання 21-31 дні (днів) |
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| SISS42LDN-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 11.3A/39A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2058 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 11.3A/39A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2058 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
на замовлення 13347 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 113.12 грн |
| 10+ | 75.57 грн |
| 100+ | 50.81 грн |
| 500+ | 37.73 грн |
| 1000+ | 34.72 грн |
| SISS42LDN-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S
MOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S
на замовлення 23626 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 116.50 грн |
| 10+ | 79.42 грн |
| 100+ | 47.41 грн |
| 500+ | 37.50 грн |
| 1000+ | 34.49 грн |
| 3000+ | 32.89 грн |
| SISS42LDN-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SISS42LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 39 A, 0.0149 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 39A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 57W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0149ohm
Description: VISHAY - SISS42LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 39 A, 0.0149 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 39A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 57W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0149ohm
на замовлення 1003 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 171.08 грн |
| 10+ | 109.98 грн |
| 100+ | 73.48 грн |
| 500+ | 54.01 грн |
| 1000+ | 45.67 грн |