SISS4409DN-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.2A (Tc)
на замовлення 5476 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.32 грн |
| 10+ | 73.47 грн |
| 100+ | 57.15 грн |
| 500+ | 45.46 грн |
| 1000+ | 37.03 грн |
| 2000+ | 34.86 грн |
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Технічний опис SISS4409DN-T1-GE3 Vishay Siliconix
Description: P-CHANNEL 40 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V, Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.2A (Tc).
Інші пропозиції SISS4409DN-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SISS4409DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: P-CHANNEL 40 V (D-S) MOSFET POWE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.2A (Tc) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SISS4409DN-T1-GE3 | Виробник : Vishay / Siliconix |
MOSFET P-Channel 40 V (D-S) MOSFET PowerPAK 1212-8S, 9 mohm a. 10V, 12 mohm a. 4.5V |
товар відсутній |