SISS5208DN-T1-GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 2+ | 175.97 грн |
| 10+ | 96.36 грн |
| 100+ | 76.11 грн |
| 6000+ | 36.59 грн |
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Технічний опис SISS5208DN-T1-GE3 Vishay / Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 172A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 10A, 8V, Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): +8V, -7V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V.
Інші пропозиції SISS5208DN-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SISS5208DN-T1-GE3 | Vishay Siliconix |
 Description: N-CHANNEL 20-V (D-S) MOSFETPackaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 172A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 10A, 8V Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): +8V, -7V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. |
| SISS5208DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 10A, 8V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): +8V, -7V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 10A, 8V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): +8V, -7V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.