SISS54DN-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 45.86 грн |
| 6000+ | 42.51 грн |
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Технічний опис SISS54DN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc), Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V.
Інші пропозиції SISS54DN-T1-GE3 за ціною від 42.05 грн до 108.5 грн
| Фото | Назва | Виробник | Інформація |
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SISS54DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc) Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V |
на замовлення 8319 шт: термін постачання 21-31 дні (днів) |
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SISS54DN-T1-GE3 | Виробник : Vishay / Siliconix |
MOSFET 30V N-CHANNEL (D-S) |
на замовлення 9545 шт: термін постачання 21-30 дні (днів) |
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| SISS54DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 148.5A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 72nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 300A кількість в упаковці: 1 шт |
товар відсутній |
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| SISS54DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 148.5A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 72nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 300A |
товар відсутній |