SISS54DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
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Технічний опис SISS54DN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc), Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V.
Інші пропозиції SISS54DN-T1-GE3 за ціною від 50.76 грн до 192.26 грн
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SISS54DN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc) Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V |
на замовлення 3833 шт: термін постачання 21-31 дні (днів) |
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SISS54DN-T1-GE3 | Vishay / Siliconix |
MOSFETs PPAK1212 N-CH 30V 51.1A |
на замовлення 180 шт: термін постачання 21-30 дні (днів) |
|
| SISS54DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
на замовлення 3833 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 176.75 грн |
| 10+ | 109.69 грн |
| 100+ | 74.95 грн |
| 500+ | 56.38 грн |
| 1000+ | 51.95 грн |
| SISS54DN-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs PPAK1212 N-CH 30V 51.1A
MOSFETs PPAK1212 N-CH 30V 51.1A
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 192.26 грн |
| 10+ | 120.45 грн |
| 100+ | 72.62 грн |
| 500+ | 61.87 грн |
| 1000+ | 55.02 грн |
| 3000+ | 50.76 грн |