SISS588DN-T1-BE3 Vishay / Siliconix
на замовлення 5850 шт:
термін постачання 224-233 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 113.30 грн |
| 10+ | 91.37 грн |
| 100+ | 62.24 грн |
| 500+ | 52.67 грн |
| 1000+ | 42.96 грн |
| 3000+ | 38.18 грн |
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Технічний опис SISS588DN-T1-BE3 Vishay / Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V, Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V.
Інші пропозиції SISS588DN-T1-BE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SISS588DN-T1-BE3 | Виробник : Vishay Siliconix |
 Description: N-CHANNEL 80 V (D-S) MOSFET 150Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V |
товару немає в наявності |
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SISS588DN-T1-BE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET 150 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V |
товару немає в наявності |