SISS61DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 32.90 грн |
| 6000+ | 29.51 грн |
| 9000+ | 28.40 грн |
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Технічний опис SISS61DN-T1-GE3 Vishay Siliconix
Description: VISHAY - SISS61DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 111.9 A, 3500 µohm, PowerPAK 1212, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 111.9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 65.8W, Gate-Source-Schwellenspannung, max.: 900mV, euEccn: NLR, Verlustleistung: 65.8W, Bauform - Transistor: PowerPAK 1212, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen III, productTraceability: No, Wandlerpolarität: p-Kanal, Kanaltyp: p-Kanal, Betriebswiderstand, Rds(on): 0.0029ohm, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 3500µohm, SVHC: Lead (04-Feb-2026).
Інші пропозиції SISS61DN-T1-GE3 за ціною від 25.25 грн до 128.81 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SISS61DN-T1-GE3 | VISHAY |
Description: VISHAY - SISS61DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 111.9 A, 3500 µohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 111.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 65.8W Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 65.8W Bauform - Transistor: PowerPAK 1212 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III productTraceability: No Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0029ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3500µohm SVHC: Lead (04-Feb-2026) |
на замовлення 27315 шт: термін постачання 21-31 дні (днів) |
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SISS61DN-T1-GE3 | Vishay Semiconductors |
MOSFETs Pch 20V Vds 8V Vgs PowerPAK 1212-8S |
на замовлення 21043 шт: термін постачання 21-30 дні (днів) |
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SISS61DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -89.6A Pulsed drain current: -200A Power dissipation: 42.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3838 шт: термін постачання 14-30 дні (днів) |
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SISS61DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 30.9/111.9A PPAK Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 5W (Ta), 65.8W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8S Packaging: Cut Tape (CT) |
на замовлення 13472 шт: термін постачання 21-31 дні (днів) |
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SISS61DN-T1-GE3 | VISHAY |
Description: VISHAY - SISS61DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 111.9 A, 3500 µohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 111.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 65.8W Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3500µohm SVHC: Lead (04-Feb-2026) |
на замовлення 27315 шт: термін постачання 21-31 дні (днів) |
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| SISS61DN-T1-GE3 |
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Виробник: VISHAY
Description: VISHAY - SISS61DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 111.9 A, 3500 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 111.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 65.8W
Gate-Source-Schwellenspannung, max.: 900mV
euEccn: NLR
Verlustleistung: 65.8W
Bauform - Transistor: PowerPAK 1212
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: No
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.0029ohm
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 3500µohm
SVHC: Lead (04-Feb-2026)
Description: VISHAY - SISS61DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 111.9 A, 3500 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 111.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 65.8W
Gate-Source-Schwellenspannung, max.: 900mV
euEccn: NLR
Verlustleistung: 65.8W
Bauform - Transistor: PowerPAK 1212
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: No
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.0029ohm
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 3500µohm
SVHC: Lead (04-Feb-2026)
на замовлення 27315 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 54.48 грн |
| 500+ | 39.92 грн |
| 1500+ | 33.62 грн |
| SISS61DN-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs Pch 20V Vds 8V Vgs PowerPAK 1212-8S
MOSFETs Pch 20V Vds 8V Vgs PowerPAK 1212-8S
на замовлення 21043 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 100.10 грн |
| 10+ | 65.43 грн |
| 100+ | 38.61 грн |
| 500+ | 30.31 грн |
| 1000+ | 27.64 грн |
| 3000+ | 25.74 грн |
| 6000+ | 25.25 грн |
| SISS61DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -89.6A
Pulsed drain current: -200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -89.6A
Pulsed drain current: -200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3838 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 118.51 грн |
| 10+ | 79.83 грн |
| 50+ | 55.53 грн |
| 100+ | 47.83 грн |
| 250+ | 40.21 грн |
| 500+ | 36.06 грн |
| 1000+ | 32.93 грн |
| 3000+ | 32.17 грн |
| SISS61DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
на замовлення 13472 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 122.63 грн |
| 10+ | 74.66 грн |
| 100+ | 49.98 грн |
| 500+ | 36.98 грн |
| 1000+ | 33.79 грн |
| SISS61DN-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SISS61DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 111.9 A, 3500 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 111.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 900mV
euEccn: NLR
Verlustleistung: 65.8W
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 3500µohm
SVHC: Lead (04-Feb-2026)
Description: VISHAY - SISS61DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 111.9 A, 3500 µohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 111.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 900mV
euEccn: NLR
Verlustleistung: 65.8W
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 3500µohm
SVHC: Lead (04-Feb-2026)
на замовлення 27315 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 128.81 грн |
| 50+ | 81.88 грн |
| 100+ | 54.48 грн |
| 500+ | 39.92 грн |
| 1500+ | 33.62 грн |