SISS66DN-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 30V 49.1/178.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 40.35 грн |
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Технічний опис SISS66DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 49.1/178.3A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc), Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V.
Інші пропозиції SISS66DN-T1-GE3 за ціною від 36.27 грн до 104.62 грн
| Фото | Назва | Виробник | Інформація |
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SISS66DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 49.1/178.3A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc) Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V |
на замовлення 5084 шт: термін постачання 21-31 дні (днів) |
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SISS66DN-T1-GE3 | Виробник : Vishay / Siliconix |
MOSFET N-CHANNEL 30-V (D-S) MOSFET W/ |
на замовлення 17448 шт: термін постачання 21-30 дні (днів) |
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| SISS66DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 42.1W Mounting: SMD Kind of package: reel; tape Pulsed drain current: 200A Type of transistor: N-MOSFET + Schottky Power dissipation: 42.1W Polarisation: unipolar Drain current: 142.6A Drain-source voltage: 30V Case: PowerPAK® 1212-8 Gate charge: 85.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V On-state resistance: 2.19mΩ кількість в упаковці: 1 шт |
товар відсутній |
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| SISS66DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 42.1W Mounting: SMD Kind of package: reel; tape Pulsed drain current: 200A Type of transistor: N-MOSFET + Schottky Power dissipation: 42.1W Polarisation: unipolar Drain current: 142.6A Drain-source voltage: 30V Case: PowerPAK® 1212-8 Gate charge: 85.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V On-state resistance: 2.19mΩ |
товар відсутній |