| Кількість | Ціна |
|---|---|
| 3+ | 152.12 грн |
| 10+ | 96.46 грн |
| 100+ | 56.17 грн |
| 500+ | 44.69 грн |
| 1000+ | 40.81 грн |
| 3000+ | 37.14 грн |
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Технічний опис SISS76LDN-T1-GE3 Vishay / Siliconix
Description: VISHAY - SISS76LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 70 V, 67.4 A, 6250 µohm, PowerPAK 1212-8S, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 70V, rohsCompliant: YES, Dauer-Drainstrom Id: 67.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 1.6V, Verlustleistung: 57W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: PowerPAK 1212-8S, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 4.5V, Drain-Source-Durchgangswiderstand: 6250µohm.
Інші пропозиції SISS76LDN-T1-GE3 за ціною від 37.06 грн до 179.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SISS76LDN-T1-GE3 | VISHAY |
 Description: VISHAY - SISS76LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 70 V, 67.4 A, 6250 µohm, PowerPAK 1212-8S, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 70V rohsCompliant: YES Dauer-Drainstrom Id: 67.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 57W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK 1212-8S Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 6250µohm |
на замовлення 403 шт: термін постачання 21-31 дні (днів) |
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| SISS76LDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 70 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| SISS76LDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 70 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Cut Tape (CT) |
на замовлення 5977 шт: термін постачання 21-31 дні (днів) |
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| SISS76LDN-T1-GE3 |
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Виробник: VISHAY
Description: VISHAY - SISS76LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 70 V, 67.4 A, 6250 µohm, PowerPAK 1212-8S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 70V
rohsCompliant: YES
Dauer-Drainstrom Id: 67.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 57W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212-8S
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 6250µohm
Description: VISHAY - SISS76LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 70 V, 67.4 A, 6250 µohm, PowerPAK 1212-8S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 70V
rohsCompliant: YES
Dauer-Drainstrom Id: 67.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 57W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212-8S
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 6250µohm
на замовлення 403 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 179.26 грн |
| 10+ | 115.12 грн |
| 100+ | 77.30 грн |
| SISS76LDN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 37.61 грн |
| SISS76LDN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Cut Tape (CT)
на замовлення 5977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 91.98 грн |
| 10+ | 64.60 грн |
| 100+ | 51.91 грн |
| 500+ | 42.06 грн |
| 1000+ | 37.06 грн |