на замовлення 34223 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.88 грн |
| 10+ | 62.62 грн |
| 100+ | 44.51 грн |
| 500+ | 38.99 грн |
| 1000+ | 34.37 грн |
| 3000+ | 32.99 грн |
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Технічний опис SISS76LDN-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc), Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V.
Інші пропозиції SISS76LDN-T1-GE3 за ціною від 33.96 грн до 89.58 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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| SISS76LDN-T1-GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 70V 19.6A/67.4A PPAKPackaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| SISS76LDN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| SISS76LDN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 70V; 54A; Idm: 120A; 36W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 70V Drain current: 54A Pulsed drain current: 120A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SISS76LDN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 70V; 54A; Idm: 120A; 36W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 70V Drain current: 54A Pulsed drain current: 120A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |