SISS94DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.4A/19.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
| Кількість | Ціна |
|---|---|
| 3000+ | 26.65 грн |
| 6000+ | 23.82 грн |
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Технічний опис SISS94DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 200V 5.4A/19.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V, Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V.
Інші пропозиції SISS94DN-T1-GE3 за ціною від 23.95 грн до 107.53 грн
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SISS94DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 5.4A/19.5A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V |
на замовлення 6369 шт: термін постачання 21-31 дні (днів) |
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SISS94DN-T1-GE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 200-V(D-S) PowerPAK 1212-8S |
на замовлення 15542 шт: термін постачання 21-30 дні (днів) |
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| SISS94DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.4A/19.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
Description: MOSFET N-CH 200V 5.4A/19.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
на замовлення 6369 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 102.12 грн |
| 10+ | 62.03 грн |
| 100+ | 41.17 грн |
| 500+ | 30.23 грн |
| 1000+ | 27.52 грн |
| SISS94DN-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs N-CHANNEL 200-V(D-S) PowerPAK 1212-8S
MOSFETs N-CHANNEL 200-V(D-S) PowerPAK 1212-8S
на замовлення 15542 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 107.53 грн |
| 10+ | 66.65 грн |
| 100+ | 38.48 грн |
| 500+ | 30.10 грн |
| 1000+ | 27.44 грн |
| 3000+ | 23.95 грн |