SIZ200DT-T1-GE3 Vishay Semiconductors
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.28 грн |
| 10+ | 73.75 грн |
| 100+ | 46.46 грн |
| 500+ | 38.59 грн |
| 1000+ | 34.72 грн |
| 3000+ | 30.24 грн |
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Технічний опис SIZ200DT-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 22A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.3W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-PowerPair® (3.3x3.3).
Інші пропозиції SIZ200DT-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SIZ200DT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 22A 8POWERPAIRPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
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SIZ200DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 22A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) |
товару немає в наявності |
В кошику од. на суму грн. |
| SIZ200DT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 22A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Description: MOSFET 2N-CH 30V 22A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIZ200DT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 22A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Description: MOSFET 2N-CH 30V 22A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
товару немає в наявності
В кошику
од. на суму грн.