SIZ250DT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 33.83 грн |
| 6000+ | 30.36 грн |
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Технічний опис SIZ250DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.3W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V, Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-PowerPair® (3.3x3.3), Part Status: Active.
Інші пропозиції SIZ250DT-T1-GE3 за ціною від 32.93 грн до 129.67 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIZ250DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 14A 8POWERPAIRPart Status: Active Supplier Device Package: 8-PowerPair® (3.3x3.3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 4.3W (Ta), 33W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V |
на замовлення 11663 шт: термін постачання 21-31 дні (днів) |
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SIZ250DT-T1-GE3 | Vishay Semiconductors |
MOSFETs DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S |
на замовлення 24690 шт: термін постачання 21-30 дні (днів) |
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| SIZ250DT-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A 8POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 4.3W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Description: MOSFET 2N-CH 60V 14A 8POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 4.3W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
на замовлення 11663 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.04 грн |
| 10+ | 76.43 грн |
| 100+ | 51.26 грн |
| 500+ | 38.11 грн |
| 1000+ | 34.71 грн |
| SIZ250DT-T1-GE3 |
![]() |
Виробник: Vishay Semiconductors
MOSFETs DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S
MOSFETs DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S
на замовлення 24690 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.67 грн |
| 10+ | 80.98 грн |
| 100+ | 47.56 грн |
| 500+ | 37.69 грн |
| 1000+ | 34.79 грн |
| 3000+ | 32.93 грн |



