SIZ260DT-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET 2N-CH 80V 8.9A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 34.14 грн |
| 6000+ | 30.63 грн |
| 9000+ | 30.28 грн |
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Технічний опис SIZ260DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 80V 8.9A 8POWERPAIR, Packaging: Cut Tape (CT), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc), Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-PowerPair® (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V, Configuration: 2 N-Channel (Dual), Power - Max: 4.3W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 80V, Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V.
Інші пропозиції SIZ260DT-T1-GE3 за ціною від 33.59 грн до 128.57 грн
| Фото | Назва | Виробник | Інформація |
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SIZ260DT-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIZ260DT-T1-GE3 - Dual-MOSFET, n-Kanal, 80 V, 80 V, 24.7 A, 24.7 A, 0.0204 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 24.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 80V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 24.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0204ohm Verlustleistung, p-Kanal: 33W Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0204ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 33W Betriebstemperatur, max.: 150°C SVHC: Lead (07-Nov-2024) |
на замовлення 13613 шт: термін постачання 21-31 дні (днів) |
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SIZ260DT-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIZ260DT-T1-GE3 - Dual-MOSFET, n-Kanal, 80 V, 80 V, 24.7 A, 24.7 A, 0.0204 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 24.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 80V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 24.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0204ohm Verlustleistung, p-Kanal: 33W Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0204ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 33W Betriebstemperatur, max.: 150°C SVHC: Lead (07-Nov-2024) |
на замовлення 13613 шт: термін постачання 21-31 дні (днів) |
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SIZ260DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 80V 8.9A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V Configuration: 2 N-Channel (Dual) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
на замовлення 13846 шт: термін постачання 21-31 дні (днів) |
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SIZ260DT-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs DUAL N-CHANNEL 80-V PowerPAIR 3 x 3S |
на замовлення 7205 шт: термін постачання 21-30 дні (днів) |
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