SIZ320DT-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 25V 30/40A 8POWER33, Supplier Device Package: 8-Power33 (3x3), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V, Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc), Drain to Source Voltage (Vdss): 25V, Power - Max: 16.7W, 31W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).