SIZ340BDT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
| Кількість | Ціна |
|---|---|
| 3000+ | 22.57 грн |
| 6000+ | 20.12 грн |
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Технічний опис SIZ340BDT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 3590 µohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 69.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 69.3A, Drain-Source-Durchgangswiderstand, p-Kanal: 3590µohm, Verlustleistung, p-Kanal: 31W, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: Lead (04-Feb-2026), Bauform - Transistor: PowerPAIR, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, Drain-Source-Durchgangswiderstand, n-Kanal: 3590µohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 31W, Betriebstemperatur, max.: 150°C.
Інші пропозиції SIZ340BDT-T1-GE3 за ціною від 16.55 грн до 90.43 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIZ340BDT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 3590 µohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 69.3A Drain-Source-Durchgangswiderstand, p-Kanal: 3590µohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 3590µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C |
на замовлення 7698 шт: термін постачання 21-31 дні (днів) |
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SIZ340BDT-T1-GE3 | Vishay / Siliconix |
MOSFETs PPAIR3X3 2NCH 30V 16.9A |
на замовлення 8178 шт: термін постачання 21-30 дні (днів) |
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SIZ340BDT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16.9A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
на замовлення 7842 шт: термін постачання 21-31 дні (днів) |
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SIZ340BDT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 3590 µohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 69.3A Drain-Source-Durchgangswiderstand, p-Kanal: 3590µohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 3590µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C |
на замовлення 7698 шт: термін постачання 21-31 дні (днів) |
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| SIZ340BDT-T1-GE3 |
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Виробник: VISHAY
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 3590 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 69.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 69.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 3590µohm
Verlustleistung, p-Kanal: 31W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3590µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 3590 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 69.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 69.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 3590µohm
Verlustleistung, p-Kanal: 31W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3590µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C
на замовлення 7698 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 38.53 грн |
| 500+ | 27.84 грн |
| 1500+ | 23.39 грн |
| SIZ340BDT-T1-GE3 |
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Виробник: Vishay / Siliconix
MOSFETs PPAIR3X3 2NCH 30V 16.9A
MOSFETs PPAIR3X3 2NCH 30V 16.9A
на замовлення 8178 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 78.45 грн |
| 10+ | 48.58 грн |
| 100+ | 27.65 грн |
| 500+ | 21.44 грн |
| 1000+ | 19.48 грн |
| 3000+ | 17.04 грн |
| 6000+ | 16.55 грн |
| SIZ340BDT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
на замовлення 7842 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.77 грн |
| 10+ | 53.63 грн |
| 100+ | 35.33 грн |
| 500+ | 25.79 грн |
| 1000+ | 23.41 грн |
| SIZ340BDT-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 3590 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 69.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 69.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 3590µohm
Verlustleistung, p-Kanal: 31W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3590µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 3590 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 69.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 69.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 3590µohm
Verlustleistung, p-Kanal: 31W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3590µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C
на замовлення 7698 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 90.43 грн |
| 50+ | 58.41 грн |
| 100+ | 38.53 грн |
| 500+ | 27.84 грн |
| 1500+ | 23.39 грн |