SIZ342DT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W, 4.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.06 грн |
| 6000+ | 23.11 грн |
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Технічний опис SIZ342DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 15.7A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 3.6W, 4.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-Power33 (3x3), Part Status: Active.
Інші пропозиції SIZ342DT-T1-GE3 за ціною від 23.40 грн до 82.32 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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SIZ342DT-T1-GE3 | Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3 |
на замовлення 2550 шт: термін постачання 21-30 дні (днів) |
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SIZ342DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 15.7A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.6W, 4.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
на замовлення 12104 шт: термін постачання 21-31 дні (днів) |
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| SIZ342DT-T1-GE3 |
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Виробник: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
на замовлення 2550 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.69 грн |
| 10+ | 53.51 грн |
| 100+ | 36.24 грн |
| 500+ | 30.72 грн |
| 1000+ | 25.06 грн |
| 3000+ | 23.40 грн |
| SIZ342DT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W, 4.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W, 4.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
на замовлення 12104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.32 грн |
| 10+ | 53.10 грн |
| 100+ | 36.89 грн |
| 500+ | 27.78 грн |
| 1000+ | 25.53 грн |